Floating-gate synaptic transistors with bending resistance and strong charge storage capability via interfacial redispersion and reconfiguration

Journal of Materials Chemistry C 2026

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Authors: Xiao Fu, Weijin Wu, Zhihao Liang, Honglong Ning, Weixin Cheng, Yonglin Yang, Weiguang Xie, Xubing Lu, Rihui Yao, Junbiao Peng
DOI: 10.1039/d5tc03718b
Cited by: 0
References: 42

Abstract

The development of artificial neural networks based on neuromorphic devices is expected to break through the von Neumann bottleneck and promote the further development of artificial intelligence technology.

Fields of Study & Subjects

Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices Advancements in Semiconductor Devices and Circuit Design

Publication details

Journal / source
Journal of Materials Chemistry C
Volume
14
Issue
10
Pages
4053–4065
Publication date
1 January 2026
Language
EN