Progress in nickel oxide semiconductors for quantum dot-based electroluminescent devices

Journal of Materials Chemistry C 2026

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Authors: Shanfeng Xu, Miaoning Liu, Bo Li, Fensha Cai, Shan Pang, Xiaohong Jiang, Zuliang Du
DOI: 10.1039/d5tc03863d
Cited by: 4
References: 142

Abstract

This review examines nickel oxide (NiO x ) as a stable p-type hole injection/transport material for QLEDs, summarizing advances in synthesis, optimization, and device integration that enable the development of efficient, commercial QLEDs.

Fields of Study & Subjects

Quantum Dots Synthesis And Properties Silicon Nanostructures and Photoluminescence Transition Metal Oxide Nanomaterials

Publication details

Journal / source
Journal of Materials Chemistry C
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
5
Pages
1763–1777
Publication date
1 January 2026
Language
EN