Ferroelectric devices as physical reservoirs: enabling nonlinear dynamics and memory in neuromorphic systems
Abstract
Multiple states and dynamics of polarization in ferroelectric materials provide nonlinearity and short-term memory, enabling state richness required for physical reservoir computing.
Fields of Study & Subjects
Neural Networks and Reservoir Computing
Advanced Memory and Neural Computing
Ferroelectric and Negative Capacitance Devices
Publication details
- Journal / source
- Journal of Materials Chemistry C
- Publisher
- Royal Society of Chemistry (RSC)
- Volume
- 14
- Issue
- 5
- Pages
- 1691–1707
- Publication date
- 1 January 2026
- Language
- EN