Improved performance of organic single-crystal thin-film transistors via contact doping with a high electron-affinity dopant

Journal of Materials Chemistry C 2026

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Authors: Xinmin Shi, Wei Deng, Shiquan He, Xiaobin Ren, Haoyu Jiang, Yuqing Luo, Bo Zhao, Xiujuan Zhang, Jiansheng Jie
DOI: 10.1039/d5tc03977k
Cited by: 0
References: 38

Abstract

NDP-9 contact doping with a high electron affinity reduces the Schottky barrier and trap density, enabling high-mobility organic single-crystal transistors with low subthreshold swing and long-term bias-stress stability.

Fields of Study & Subjects

Organic Electronics and Photovoltaics Thin-Film Transistor Technologies 2D Materials and Applications

Publication details

Journal / source
Journal of Materials Chemistry C
Volume
14
Issue
11
Pages
4371–4379
Publication date
1 January 2026
Language
EN