Ferroelectric memristors optimized in thickness for short-term memory-driven reservoir computing

Journal of Materials Chemistry C 2026

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Authors: Junhyeok Park, Sungjun Kim
DOI: 10.1039/d5tc03983e
Cited by: 1
References: 88

Abstract

Thickness-optimized Mo/HZO/Si ferroelectric memristors show strong STM, high polarization, large TER, and self-rectification. A 5-nm HZO enables multilevel synapses and reservoir computing with 98.71% Hand-MNIST accuracy for in-sensor hardware.

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Advanced Memory and Neural Computing Ferroelectric and Piezoelectric Materials

Publication details

Journal / source
Journal of Materials Chemistry C
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
13
Pages
5435–5446
Publication date
1 January 2026
Language
EN