Interfacial oxygen-scavenging-driven formation of atomic-layer-deposited MoO 2 on MoN x electrodes for improved TiO 2 capacitor performance

Journal of Materials Chemistry C 2026

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Authors: Wangu Kang, Jae Hyeon Lee, Jeong Hwan Han
DOI: 10.1039/d5tc04067a
Cited by: 1
References: 31

Abstract

Oxygen-scavenging MoN x converts ALD MoO x into metastable monoclinic MoO 2 , enabling high-k rutile TiO 2 -based capacitors with low leakage and ultralow EOT.

Fields of Study & Subjects

Semiconductor materials and devices Supercapacitor Materials and Fabrication Advancements in Battery Materials

Publication details

Journal / source
Journal of Materials Chemistry C
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
9
Pages
3587–3596
Publication date
1 January 2026
Language
EN