Subzero temperature-induced lattice compression enables high carrier mobility in MAPbBr 3 single crystals

Journal of Materials Chemistry C 2026

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Authors: Tehinke Achille Malo, Xin Xu, Min Soo Kim, Dong Hwan Wang, Aung Ko Ko Kyaw
DOI: 10.1039/d5tc04117a
Cited by: 0
References: 75

Abstract

Freezing-temperature crystallization induces lattice compression in MAPbBr 3 single crystals, leading to bandgap tunability, extended carrier lifetime, and high mobility. These properties enable low-voltage and high-performance optoelectronic devices.

Fields of Study & Subjects

Perovskite Materials and Applications 2D Materials and Applications Ferroelectric and Piezoelectric Materials

Publication details

Journal / source
Journal of Materials Chemistry C
Volume
14
Issue
13
Pages
5558–5569
Publication date
1 January 2026
Language
EN