Barrier-thickness-engineered giant magnetotransport and multi-level storage in a CrTe 2 /Al 2 S 3 van der Waals multiferroic junction
Abstract
A bilayer Al 2 S 3 barrier in a CrTe 2 /Al 2 S 3 /CrTe 2 MFTJ boosts TER to 3912%, TMR to 124.7%, and enables six non-volatile states with spin-filtering and NDR for multi-level memory.
Fields of Study & Subjects
2D Materials and Applications
Multiferroics and related materials
Magnetic and transport properties of perovskites and related materials
Publication details
- Journal / source
- Journal of Materials Chemistry C
- Publisher
- Royal Society of Chemistry (RSC)
- Volume
- 14
- Issue
- 13
- Pages
- 5456–5466
- Publication date
- 1 January 2026
- Language
- EN