Extreme ultraviolet induced reactions of tin–oxo cage photoresists

Journal of Materials Chemistry C 2026 Open access

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Authors: Najmeh Sadegh, Jarich Haitjema, Yu Qi (Richie) Zhang, Lianjia Wu, Olivier Lugier, Ivan Bespalov, Dimitrios Kazazis, Michaela Vockenhuber, Yasin Ekinci, Katharina Witte, Benjamin Watts, Ivan Pollentier
+2 more Danilo De Simone, Albert M. Brouwer
DOI: 10.1039/d5tc04167h
Cited by: 3
References: 80

Abstract

Upon EUV irradiation, n -butyltin–oxo cages release butene, butane and octane with an initial quantum yield of 5 Sn–C bond breaks per absorbed photon (92 eV). To render the resist film insoluble only 2 Sn–C bonds (on average) need to be broken.

Fields of Study & Subjects

Advancements in Photolithography Techniques Optical Coatings and Gratings Nanofabrication and Lithography Techniques

Publication details

Journal / source
Journal of Materials Chemistry C
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
15
Pages
6177–6189
Publication date
1 January 2026
Language
EN