Enhancing proton irradiation tolerance of a-IGZO thin-film transistors through hydrogen doping

Journal of Materials Chemistry C 2026

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Authors: Seongjin Oh, Hwijoong Kim, Jiseong Oh, H. Kim, Sejoong Kim, Hyunseok Cho, C. Kim
DOI: 10.1039/d5tc04196a
Cited by: 3
References: 81

Abstract

Hydrogen doping enhances the radiation tolerance of a-IGZO TFTs by suppressing oxygen vacancies and compensating excess carriers, enabling stable operation under high-energy proton irradiation.

Fields of Study & Subjects

Thin-Film Transistor Technologies solar cell performance optimization Transition Metal Oxide Nanomaterials

Publication details

Journal / source
Journal of Materials Chemistry C
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
9
Pages
3637–3647
Publication date
1 January 2026
Language
EN