A multimodal artificial sensory neuron realized by a bio-voltage-level threshold switching memristor

Journal of Materials Chemistry C 2026

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Authors: Huaxian Liang, Ting Jiang, Jin Zhou, Hui Wu, Nan Tian, Shizhe Lin, Baolin Zhang
DOI: 10.1039/d5tc04265h
Cited by: 1
References: 52

Abstract

We fabricated a threshold switching memristor (TSM) with a structure of Pt/Ag/Al 2 O 3 /HfO 2 /Ag NIs/Pt. Building upon this TSM, we further developed an artificial sensory neuron with spike amplitude encoding capabilities.

Fields of Study & Subjects

Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices Neural Networks and Reservoir Computing

Publication details

Journal / source
Journal of Materials Chemistry C
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
11
Pages
4669–4680
Publication date
1 January 2026
Language
EN