6-Bit multilevel and highly linear synaptic plasticity in sputtered AlScN ferroelectric capacitors on (100) Si

Journal of Materials Chemistry C 2026

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Authors: Siyu Yan, Xuguang Deng, Qizhi Huang, Tiwei Chen, Gaofu Guo, Qichao Yang, Wei Cheng, Zhongming Zeng, Wenkui Lin, Baoshun Zhang
DOI: 10.1039/d5tc04276c
Cited by: 0
References: 33

Abstract

Fully CMOS-compatible sputtered AlScN ferroelectric capacitors deliver 64 conductance states with near-linear weight updates, achieving 94.72% MNIST accuracy and validating their potential for large-scale neuromorphic computing.

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Advanced Memory and Neural Computing Ferroelectric and Piezoelectric Materials

Publication details

Journal / source
Journal of Materials Chemistry C
Volume
14
Issue
18
Pages
7829–7835
Publication date
1 January 2026
Language
EN