Symmetric transport in sub-5-nm monolayer Sn 2 S 2 -based homogeneous CMOS devices

Journal of Materials Chemistry C 2026

View at publisher

Authors: Yan-Dong Guo, Ye-Wei Chen, Yu-Han Huang, Man-Jun Jiang, Yue Jiang, Liyan Lin, Fan Guo, Hong-Li Zeng, Xiaohong Yan

DOI: 10.1039/d5tc04303d

Cited by: 0

References: 67

Abstract

Sub-5 nm homogeneous CMOS devices with ultra-high on-state current and pronounced n/p symmetry are achieved using a Sn 2 S 2 monolayer.

2D Materials and Applications Advancements in Semiconductor Devices and Circuit Design Graphene research and applications

References 67