Charge-transfer doping in C 3 N 2 vdWHs endows sub-5 nm FETs with near-Boltzmann switching and ultrahigh on-state current

Shunran Shan; Wenkai Zhao; Dongqing Zou; Yuqing Xu; Feng Gao; Yuliang Liu; Chuan-Lu Yang

doi:10.1039/d5tc04367k

Charge-transfer doping in C 3 N 2 vdWHs endows sub-5 nm FETs with near-Boltzmann switching and ultrahigh on-state current

Journal of Materials Chemistry C 2026

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Authors: Shunran Shan, Wenkai Zhao, Dongqing Zou, Yuqing Xu, Feng Gao, Yuliang Liu, Chuan-Lu Yang

DOI: 10.1039/d5tc04367k

Cited by: 0

References: 50

Abstract

This work addresses the critical challenge of scaling transistors beyond Moore's law by proposing a novel two-dimensional channel material composed of monolayer C 3 N 2 and its graphene heterostructure.

Fields of Study & Subjects

2D Materials and Applications Graphene research and applications Advancements in Semiconductor Devices and Circuit Design

Publication details

Journal / source: Journal of Materials Chemistry C
Volume: 14
Issue: 15
Pages: 6397–6406
Publication date: 1 January 2026
Language: EN

References 50