Neutron reflectometry for in-depth porosity and figure-of-merit correction of organic electrochemical transistors

Journal of Materials Chemistry C 2026

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Authors: Yi‐Hsuan Tung, Tzu‐Yen Huang, Guo-Hao Jiang, Shang‐Wen Su, Yan-Cheng Lin
DOI: 10.1039/d5tc04461h
Cited by: 0
References: 45

Abstract

A porous channel structure with optimized pore dimensions and preserved molecular ordering enhances the performance of organic electrochemical transistors (OECTs).

Fields of Study & Subjects

Conducting polymers and applications Organic Electronics and Photovoltaics Organic and Molecular Conductors Research

Publication details

Journal / source
Journal of Materials Chemistry C
Volume
14
Issue
13
Pages
5177–5189
Publication date
1 January 2026
Language
EN