Suppressing the current leakage and voltage drift in indium-modified electrical switching devices
Abstract
Increasing the In content suppresses the leakage current and slows the V th drift of In–Te OTS devices by reducing homopolar Te–Te bonding.
Fields of Study & Subjects
Phase-change materials and chalcogenides
Advanced Memory and Neural Computing
Thin-Film Transistor Technologies
Publication details
- Journal / source
- Journal of Materials Chemistry C
- Publisher
- Royal Society of Chemistry (RSC)
- Volume
- 14
- Issue
- 11
- Pages
- 4380–4388
- Publication date
- 1 January 2026
- Language
- EN