Structure and electrical properties of Ga 2 O 3 thin films grown by atomic layer deposition on Ru and TiN electrodes

Journal of Materials Chemistry C 2026 Open access

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Authors: Lauri Aarik, Aivar Tarre, Hugo Mändar, Joonas Merisalu, Jun Lu, Lars Hultman, Jaan Aarik
DOI: 10.1039/d5tc04544d
Cited by: 1
References: 50

Abstract

The composition, structure, and electrical properties of Ga 2 O 3 thin films, grown by atomic layer deposition (ALD) from GaI 3 and O 3 precursors, were characterized.

Fields of Study & Subjects

Ga2O3 and related materials GaN-based semiconductor devices and materials Semiconductor materials and devices

Publication details

Journal / source
Journal of Materials Chemistry C
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
16
Pages
6870–6883
Publication date
1 January 2026
Language
EN