d-State modulation in Cu 2 SnS 4 governs electronic transport descriptors and VOC sensing selectivity: a DFT-BoltzTraP2 study
Abstract
d-State engineering in Cu 2 SnS 4 facilitates dopant-selective modulation of electronic structure and VOC adsorption characteristics.
Fields of Study & Subjects
Gas Sensing Nanomaterials and Sensors
Copper-based nanomaterials and applications
Chalcogenide Semiconductor Thin Films
Publication details
- Journal / source
- Chemical Communications
- Publisher
- Royal Society of Chemistry (RSC)
- Volume
- 62
- Issue
- 15
- Pages
- 4515–4518
- Publication date
- 1 January 2026
- Language
- EN