Study on the influence of the spatial distribution of nitrogen concentration on the uniformity of GaN crystal growth using the Na-flux method

CrystEngComm 2026

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Authors: Ning Tang, Zhiwei Si, XiaoHui Peng, Tao Zhang, Mengya Li, Kexin Chen, Zongliang Liu, Ke Xu

DOI: 10.1039/d6ce00002a

Cited by: 0

References: 23

Abstract

Study on the non-uniformity of thickness and quality in GaN crystals grown by Na-flux method.

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Acoustic Wave Resonator Technologies

References 23