Carbon inclusions in the growth of an 8 inch 4H-SiC crystal

CrystEngComm 2026

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Authors: Lingling Xuan, Xinyu Xie, Sheng'ou Lu, Qinqin Shao, Anqi Wang, Zeyu Chen, Wang fan, Junyi Shen, Can Cui, Lingmao Xu, Xiaodong Pi, Deren Yang
+1 more Xuefeng Han
DOI: 10.1039/d6ce00148c
Cited by: 1
References: 23

Abstract

Forces acting on graphite particles, their trajectories, and the distribution of carbon inclusions in 4H-SiC crystals grown by the PVT method.

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Diamond and Carbon-based Materials Research Advanced ceramic materials synthesis

Publication details

Journal / source
CrystEngComm
Publisher
Royal Society of Chemistry (RSC)
Volume
28
Issue
19
Pages
3064–3073
Publication date
1 January 2026
Language
EN