Device simulation of layer dependence on 10-nm-gate MoS 2 transistors
Abstract
2D MoS 2 MOSFETs show layer-dependent performance. A 10-nm-gate ML device with optimal doping delivers the best p-type performance for both LP and HP applications, whereas the optimal BL devices achieve nearly balanced n- and p-type performance.
Fields of Study & Subjects
Advancements in Semiconductor Devices and Circuit Design
2D Materials and Applications
Semiconductor materials and devices
Publication details
- Journal / source
- Physical Chemistry Chemical Physics
- Publisher
- Royal Society of Chemistry (RSC)
- Volume
- 28
- Issue
- 22
- Pages
- 13664–13672
- Publication date
- 1 January 2026
- Language
- EN