Room temperature buried molecular engineering boosts the photovoltaic performance of wide-bandgap and all-perovskite tandems

Energy & Environmental Science 2026

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Authors: Shaopeng Liao, Guang Li, Mengqi Ren, Ying Peng, Weitao Zhao, Zichao Xu, Hongsen Cui, Chen Tao, Haibing Wang, Chen Wang, Fang Yao, Xiaojuan Cao
+7 more Jiwei Liang, Mingming Hu, Yansong Ge, Xuzhi Hu, Jian Wen, Weijun Ke, Guojia Fang
DOI: 10.1039/d6ee00301j
Cited by: 3
References: 43

Abstract

GBAM is used as buried interface modifier at room temperature. Co-annealing GBAM with perovskite layer optimizes bottom interface of wide-bandgap perovskite, achieving 29.07% for 2-terminal perovskite–perovskite tandem cells.

Fields of Study & Subjects

Perovskite Materials and Applications Organic Electronics and Photovoltaics Thermal Expansion and Ionic Conductivity

Publication details

Journal / source
Energy & Environmental Science
Publisher
Royal Society of Chemistry (RSC)
Volume
19
Issue
9
Pages
2938–2948
Publication date
1 January 2026
Language
EN