Preparation of S-doped PdSe 2 nano-film electrodes and their photoelectrochemical properties

PdSe2, as a Group 10 transition metal dichalcogenides (TMDs), has received extensive attention due to its unique optoelectrochemical properties. We know that, doping and constructing heterojunctions are the most common research methods, and the composite structures exhibit superior photoelectric performance. This paper mainly focuses on the preparation of S doped PdSe2 discontinuous nanofilm via chemical vapor deposition (CVD) method. The feasibility of this method was confirmed by SEM, EDS and Raman spectroscopy analysis. Under specific wavelength illumination (400-800 nm), the induced photocurrent density and photoresponse of the electrode materials were investigated. It was found that the S doped PdSe2 electrode photocurrent density value (0.057 mA cm-2 at 50 mW cm-2) and the response sensitivity (0.71 ms), both have a significant improvement compared with pure PdSe2 (the response current density of PdSe2 at 50 mW cm-2 is 0.008 mA cm-2 and the photoresponse is 1.3 ms, respectively). This work is expected to be used for the extraction of latent fingerprints in criminal cases.