Phosphorus-doped carbon quantum dots for broadband self-powered n-Si Schottky photodetectors with enhanced quantum efficiency and detectivity

Materials Advances 2026 Open access

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Authors: Aliakbar Hussaini, Mutahire Tok, Kurtuluş Yılmaz, Çisem Kırbıyık Kurukavak, Mahmut Kus, Beyza Terzi, Murat Yildirim
DOI: 10.1039/d6ma00351f
Cited by: 1
References: 56

Abstract

Phosphorus-doped carbon quantum dots (P-CQDs) act as synergistic interface regulators in self-powered n-Si Schottky photodetectors with increased quantum efficiency (∼23%), providing surface defect passivation and optimized energy level alignment.

Fields of Study & Subjects

Carbon and Quantum Dots Applications Silicon Nanostructures and Photoluminescence Carbon Nanotubes in Composites

Publication details

Journal / source
Materials Advances
Publisher
Royal Society of Chemistry (RSC)
Volume
7
Issue
11
Pages
5534–5551
Publication date
1 January 2026
Language
EN