Ferroelectricity in wurtzite atomic layer annealed aluminum nitride thin films

Nanoscale Horizons 2026 Open access

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Authors: Dominic A. Dalba, Dilan M. Gamachchi, Indeewari Karunarathne, Bipin Bhattarai, Xiaoman Zhang, Wangwang Xu, Somayeh Saadat Niavol, Dongmei Cao, W. J. Meng, Wen Jin Meng
DOI: 10.1039/d6nh00035e
Cited by: 1
References: 52

Abstract

. Piezoresponse force microscopy (PFM) DC bias poling experiments yield behavior consistent with ferroelectricity. Structural characterization was performed using scanning/transmission electron microscopy, X-ray photoelectron spectroscopy depth profiling, and spectroscopic ellipsometry. An ALD-based growth approach to ferroelectric aluminum nitride-based films holds significant advantage from a device scaling standpoint and provides an alternative route towards aluminum nitride-based thin films.

Fields of Study & Subjects

Acoustic Wave Resonator Technologies Ferroelectric and Piezoelectric Materials Advanced Physical and Chemical Molecular Interactions

Publication details

Journal / source
Nanoscale Horizons
Publisher
Royal Society of Chemistry (RSC)
Volume
11
Issue
7
Pages
1883–1891
Publication date
1 January 2026
Language
EN