A self-driven and high-performance photodetector based on a GeSe/Si van der Waals heterojunction with high-speed photoresponse
Abstract
We report a self-driven, broadband GeSe/Si heterojunction photodetector. It achieves a high responsivity of 29.8 A W −1 and fast rise/decay times of 8.5/23.7 µs. This work highlights GeSe-based vdW heterostructures for next-generation optoelectronics.
Fields of Study & Subjects
2D Materials and Applications
Graphene research and applications
Nanowire Synthesis and Applications
Publication details
- Journal / source
- Nanoscale Horizons
- Publisher
- Royal Society of Chemistry (RSC)
- Volume
- 11
- Issue
- 5
- Pages
- 1435–1442
- Publication date
- 1 January 2026
- Language
- EN