Preparation of high-purity Ga 2 O 3 by urea/ammonia-induced crystallization of GaOOH and its thermal conversion

New Journal of Chemistry 2026

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Authors: Yu Wang, Juan Yang, Jing Mei, Jingyu Zhang, Kui Liu, Hongqiang Wang, Qingyu Li, Xijie Lin
DOI: 10.1039/d6nj00406g
Cited by: 0
References: 55

Abstract

A new method for preparation of Ga 2 O 3 (>5 N) is proposed through urea/ammonia-induced crystallization of GaOOH and its thermal conversion. The structure of the GaOOH intermediate and its adsorption to impurities are systematically investigated.

Fields of Study & Subjects

Ga2O3 and related materials Semiconductor materials and devices Crystal Structures and Properties

Publication details

Journal / source
New Journal of Chemistry
Volume
50
Issue
11
Pages
4896–4909
Publication date
1 January 2026
Language
EN