CMOS-compatible Au doping boosts the hole carrier transport in the CVD-grown 2-inch monolayer WSe 2 films for p-type transistors

Nanoscale 2026

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Authors: Xin Lu (24821), Kai Huang, Ding Lu, Chao Tan, Xin Hao, Guohua Hu, Siyuan Luo, Z. X. Wang
DOI: 10.1039/d6nr00062b
Cited by: 2
References: 40

Abstract

Herein, we propose uniform doping of 2-inch WSe 2 via Au deposition and annealing. The 400 °C-annealed sample shows outstanding stability and uniformity, with mobility enhanced 46 times, promising for wafer-scale 2D integrated circuits.

Fields of Study & Subjects

2D Materials and Applications Nanowire Synthesis and Applications Graphene research and applications

Publication details

Journal / source
Nanoscale
Publisher
Royal Society of Chemistry (RSC)
Volume
18
Issue
17
Pages
9125–9132
Publication date
1 January 2026
Language
EN