Synthesis and conversion of InAs x P 1− x alloy nanoclusters

III–V semiconductor alloys offer a powerful platform for bandgap engineering, yet achieving precise compositional control in colloidal nanocrystals remains a challenge. Here, we report a nanocluster-mediated strategy for the synthesis of compositionally tunable InAsxP1-x alloy nanocrystals. InAsxP1-x nanoclusters with varied As:P anion ratios were synthesized using a bottom-up method and isolated to establish alloy composition before growth to small nanocrystals via thermolysis. These nanoclusters were then used as single-source precursors in a second extended growth step to further tune the size and resulting bandgap of the alloy nanocrystals. This two-step approach provides continuous bandgap modulation from 3.1 to 2 eV through both initial nanocluster composition and quantum confinement of the resulting nanocrystals. To enhance the optical properties, InAsxP1-x cores were shelled with ZnSe, leading to an increase in photoluminescence intensity through effective surface passivation. This work demonstrates that nanocluster precursors serve as a platform for precise alloy control in colloidal III–V semiconductors and provides a generalizable route to compositionally and size-tunable alloy nanocrystals.