Tuning perovskite recombination by hydrogen interstitial oxidation state

RSC Advances 2026 Open access

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Authors: Yong Huang, Rongkun Zhou, Xiaoqing Chen, Wencai Zhou, Hui Yan, Zilong Zheng
DOI: 10.1039/d6ra02305c
Cited by: 1
References: 35

Abstract

defects by eliminating the deep trapping state, stabilizing the lattice and reducing nonadiabatic coupling to 0.30 meV. This passivation enhances the carrier lifetime by 2-3 orders of magnitude, ultimately reaching 87 ns. Our findings establish a map of oxidation-state-dependent recombination for hydrogen interstitials and provide atomistic insights for developing defect passivation strategies for high-performance perovskites.

Fields of Study & Subjects

Silicon and Solar Cell Technologies Perovskite Materials and Applications solar cell performance optimization

Publication details

Journal / source
RSC Advances
Publisher
Royal Society of Chemistry (RSC)
Volume
16
Issue
25
Pages
22481–22487
Publication date
1 January 2026
Language
EN