Highly efficient electron transport layer with weak pinning and low barrier contact for solar cells: monolayer GaN on a 2D lead-free perovskite
Abstract
A vdW Cs 3 YSr 3 I 12 /monolayer GaN dual-semiconductor heterojunction is designed, where the NEA at the Y/GaN(0001) interface suppresses gap states, achieving zero-barrier quasi-ohmic contact and reaching a tunneling efficiency of 97.1% ( S = 0.74).
Fields of Study & Subjects
Perovskite Materials and Applications
solar cell performance optimization
Thin-Film Transistor Technologies
Publication details
- Journal / source
- Journal of Materials Chemistry A
- Publisher
- Royal Society of Chemistry (RSC)
- Volume
- 14
- Issue
- 22
- Pages
- 13852–13861
- Publication date
- 1 January 2026
- Language
- EN