Atomic-level growth engineering of Si via acetylene–silane co-deposition for enhanced cycle stability and high Li + dynamics in Si/C anodes

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Authors: Xintong Xu, Xiao Mu, Tao Huang, Aishui Yu
Cited by: 2
References: 35

Abstract

Late-stage SiH 4 –C 2 H 2 co-deposition regulates Si nucleation in carbon pores, producing uniform nanosized Si, which promotes a stable inorganic-rich SEI, faster kinetics, and improved cycling stability.

Fields of Study & Subjects

Advancements in Battery Materials Advanced Battery Materials and Technologies Silicon and Solar Cell Technologies

Publication details

Journal / source
Journal of Materials Chemistry A
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
29
Pages
18856–18867
Publication date
1 January 2026
Language
EN