Intrinsic point defects and Frenkel pair formation in photovoltaic absorber Zn 3 P 2 : regulating p-type conductivity
Abstract
Zn vacancies are shown to govern the electronic properties of Zn 3 P 2 , while vacancy-interstitial Frenkel pairing may partially compensate their acceptor character. The resulting defect thermodynamics impose intrinsic limits on n-type doping.
Fields of Study & Subjects
Chalcogenide Semiconductor Thin Films
Chemical and Physical Properties of Materials
Silicon and Solar Cell Technologies
Publication details
- Journal / source
- Journal of Materials Chemistry A
- Publisher
- Royal Society of Chemistry (RSC)
- Volume
- 14
- Issue
- 48
- Pages
- 32635–32646
- Publication date
- 1 January 2026
- Language
- EN