An ovonic threshold switch selector with ultralow threshold voltage drift coefficient for cross-point memory applications

Journal of Materials Chemistry C 2026

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Authors: Xiaodan Li, Yuan Xue, Yuhao Wang, Tamihiro Gotoh, Sannian Song, Zhitang Song
DOI: 10.1039/d6tc00008h
Cited by: 1
References: 33

Abstract

Breakthrough zero-drift OTS selector: unveiling the atomic-level mechanism of threshold voltage drift suppression in In 5 Te 9 As 30 Se 56 , providing a key solution for high-density 3D memory.

Fields of Study & Subjects

Phase-change materials and chalcogenides Advanced Memory and Neural Computing Thin-Film Transistor Technologies

Publication details

Journal / source
Journal of Materials Chemistry C
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
15
Pages
6389–6396
Publication date
1 January 2026
Language
EN