Emerging two-dimensional group IV chalcogenides as building blocks for advanced infrared photodetectors

Journal of Materials Chemistry C 2026

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Authors: Hao Chen, Sijie Shen, Rui Xiong, Huiwen Yu, Jiansen Wen, Xiaochun Huang, Cuilian Wen, Bo Wu, Baisheng Sa
DOI: 10.1039/d6tc00039h
Cited by: 0
References: 64

Abstract

The promising IR photoelectric properties of the 2D group IV chalcogenides (Te–Si–Pb–Te, Te–Si–Si–Se, and Te–Si–Ge–Se monolayers) highlight their potential as high-performance IRPDs.

Fields of Study & Subjects

2D Materials and Applications Advanced Semiconductor Detectors and Materials Phase-change materials and chalcogenides

Publication details

Journal / source
Journal of Materials Chemistry C
Volume
14
Issue
16
Pages
6796–6807
Publication date
1 January 2026
Language
EN