A composition-dependent structural and gradually tunable bandgap of GeS 1− x Se x alloys synthesized via chemical vapor transport

Journal of Materials Chemistry C 2026 Open access

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Authors: Der-Yuh Lin, Feng-Hsing Chou, Shangwei Chen, Sin-Wei Huang, Yu-Tai Shih, Shih-Yu Huang
DOI: 10.1039/d6tc00046k
Cited by: 2
References: 52

Abstract

Composition-dependent strain evolution in CVT-grown GeS 1− x Se x alloys generates strain-disordered crystalline structures with abundant interfacial regions.

Fields of Study & Subjects

Phase-change materials and chalcogenides Chalcogenide Semiconductor Thin Films 2D Materials and Applications

Publication details

Journal / source
Journal of Materials Chemistry C
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
20
Pages
8664–8676
Publication date
1 January 2026
Language
EN