Exploration of the ferroelectric behavior of turmeric and its integration as a gate dielectric in organic field-effect transistors

Journal of Materials Chemistry C 2026

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Authors: Ajoy Kumar Mandal, Subhamay Pramanik, Ishita Jana, Sanjoy Satpati, Sovanlal Mondal, Kalyan Mandal
DOI: 10.1039/d6tc00062b
Cited by: 1
References: 42

Abstract

Biodegradable turmeric thin film exhibit room-temperature ferroelectricity and piezoelectric response. intregated as a gate dielectric in OFETs, they enable low-voltage operation with enhanced mobility, offering a sustainable pathway for green and bio-inspired electronics.

Fields of Study & Subjects

Conducting polymers and applications Advanced Sensor and Energy Harvesting Materials Dielectric materials and actuators

Publication details

Journal / source
Journal of Materials Chemistry C
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
21
Pages
9095–9103
Publication date
1 January 2026
Language
EN