High-performance electrode-controlled MoTe 2 memristor for dual-mode synaptic plasticity in neuromorphic systems

Journal of Materials Chemistry C 2026

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Authors: Jiaju Wang, Haiyan Nan, Zijian Wang, Renxian Qi, Dan Bing, Xitao Guo, Jialing Jian, Zhengjin Weng, Shaoqing Xiao, Xiaofeng Gu
DOI: 10.1039/d6tc00183a
Cited by: 0
References: 51

Abstract

A bottom-embedded electrode MoTe 2 memtransistor suppresses Fermi-level pinning, emulates homosynaptic/heterosynaptic plasticity via H 2 O/O 2 adsorption, and enables 90.32% MNIST recognition accuracy for neuromorphic systems.

Fields of Study & Subjects

Advanced Memory and Neural Computing 2D Materials and Applications Ferroelectric and Negative Capacitance Devices

Publication details

Journal / source
Journal of Materials Chemistry C
Volume
14
Issue
15
Pages
6492–6500
Publication date
1 January 2026
Language
EN