Defect-tuned conduction in ultrathin MoTe 2 field-effect transistors

Journal of Materials Chemistry C 2026 Open access

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Authors: Adolfo Mazzotti, Kimberly Intonti, Andrea Sessa, Loredana Viscardi, O. Durante, Aniello Pelella, Stephen O'sullivan, Vilas Patil, Paul K. Hurley, Lida Ansari, Farzan Gity, Antonio Di Bartolomeo
DOI: 10.1039/d6tc00385k
Cited by: 3
References: 115

Abstract

Temperature- and pressure-dependent transport, together with DFT simulations, reveal how Schottky contacts, vacancies, and surface adsorbates jointly govern charge transport in ultrathin MoTe 2 field effect transistors.

Fields of Study & Subjects

2D Materials and Applications Topological Materials and Phenomena Organic and Molecular Conductors Research

Publication details

Journal / source
Journal of Materials Chemistry C
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
22
Pages
9773–9787
Publication date
1 January 2026
Language
EN