Metal-driven interface engineering enables multi-functionality in SrTiO 3 memristor devices

Journal of Materials Chemistry C 2026 Open access

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Authors: Seyed Mehdi Sattari‐Esfahlan, Marko Mladenović, Mathieu Luisier, Venkata Raveendra Nallagatla, Hyoung-Gyun Kim
DOI: 10.1039/d6tc00552g
Cited by: 1
References: 44

Abstract

Metal-dependent interface engineering in SrTiO 3 controls interfacial oxide formation and oxygen vacancy distribution. This enables reproducible enhancement of both resistive switching and unipolar NDR performance.

Fields of Study & Subjects

Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices Electronic and Structural Properties of Oxides

Publication details

Journal / source
Journal of Materials Chemistry C
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
25
Pages
11085–11094
Publication date
1 January 2026
Language
EN