Modulation of oxygen vacancy filaments and crystal structure by thermal annealing for high-performance solution-processed HfZrO x resistive memory

Journal of Materials Chemistry C 2026

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Authors: Chih-Chieh Hsu, Zi-Rong Qiu, Xuan-Zhi Zhang, Wun-Ciang Jhang, Tsung-Chun Hsieh, Yen-Lin Chiang, Bo‐An Ko, Wen‐Ling Shen, Sungjun Kim
DOI: 10.1039/d6tc00849f
Cited by: 1
References: 49

Abstract

Thermal annealing optimizes oxygen vacancy content and structure in HZO WORM memory. Balancing leakage suppression with robust filament formation regulates resistive switching, achieving an ON/OFF current ratio of 10 7 .

Fields of Study & Subjects

Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices Semiconductor materials and devices

Publication details

Journal / source
Journal of Materials Chemistry C
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
23
Pages
10251–10260
Publication date
1 January 2026
Language
EN