Indirect-to-direct bandgap transition in CsRESiS 4 (RE = Sc, Y, and Lanthanides) through intrinsic charge-transfer transition (CTT) behaviour

Journal of Materials Chemistry C 2026

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Authors: Sheng Zhang, Pengxiang Qiu, Shuxian Hu
DOI: 10.1039/d6tc00864j
Cited by: 1
References: 56

Abstract

Replacement of La by Sm in CsRESiS 4 induces an indirect-to-direct bandgap and charge-transfer transition behaviour. CsSmSiS 4 exhibits the most potential for high-efficiency optoelectronics.

Fields of Study & Subjects

Chalcogenide Semiconductor Thin Films 2D Materials and Applications Semiconductor materials and interfaces

Publication details

Journal / source
Journal of Materials Chemistry C
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
24
Pages
10520–10527
Publication date
1 January 2026
Language
EN