Electrode-dependent interfacial reactions and Ru loss suppression during ozone-based atomic layer deposition of TiO 2 on Ru- and RuO 2 -based electrodes

Journal of Materials Chemistry C 2026

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Authors: Haewon Song, Jonghoon Shin, Tae Kyun Kim, Heewon Paik, Dae Seon Kwon, Cheol Seong Hwang
DOI: 10.1039/d6tc01485b
Cited by: 1
References: 38

Abstract

This study investigates electrode-dependent interfacial reactions occurring during ozone-based atomic layer deposition (ALD) of rutile TiO 2 thin films on Ru- and RuO 2 -based bottom electrodes for dynamic random-access memory (DRAM) capacitors.

Fields of Study & Subjects

Semiconductor materials and devices Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices

Publication details

Journal / source
Journal of Materials Chemistry C
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
32
Pages
14546–14557
Publication date
1 January 2026
Language
EN