Atomic-level surface formation of large-size SiC substrates by chemical mechanical polishing: interfacial chemistry and removal mechanism

Journal of Materials Chemistry C 2026

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Authors: Xin Song, Yiran Zou, Jiani Guo, Zhigang Dong, Renke Kang, Shang Gao
DOI: 10.1039/d6tc01597b
Cited by: 1
References: 37

Abstract

A CeO 2 –KMnO 4 -PVP slurry enables atomic-level finishing of large-size SiC substrates CeO 2 forms Ce–O–Si bonds with the oxidized SiO 2 layer, promoting selective reaction-layer removal.

Fields of Study & Subjects

Advanced Surface Polishing Techniques Silicon Carbide Semiconductor Technologies Silicon and Solar Cell Technologies

Publication details

Journal / source
Journal of Materials Chemistry C
Publisher
Royal Society of Chemistry (RSC)
Volume
14
Issue
30
Pages
13465–13484
Publication date
1 January 2026
Language
EN