Correction: Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO 2 films for dynamic random-access memory capacitors

Journal of Materials Chemistry C 2026 Open access

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Authors: Tae Kyun Kim, Haengha Seo, Junil Lim, Heewon Paik, Jonghoon Shin, Haewon Song, Dae Seon Kwon, Cheol Seong Hwang
DOI: 10.1039/d6tc90030e
Cited by: 0

Abstract

Correction for ‘Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO 2 films for dynamic random-access memory capacitors’ by Tae Kyun Kim et al. , J. Mater. Chem. C , 2025, 13 , 16969–16980, https://doi.org/10.1039/D5TC01401H.

Fields of Study & Subjects

Semiconductor materials and devices Ferroelectric and Negative Capacitance Devices Copper Interconnects and Reliability

Publication details

Journal / source
Journal of Materials Chemistry C
Volume
14
Issue
10
Pages
4170–4171
Publication date
1 January 2026
Language
EN