GaN‐Based Red Resonant Cavity Light‐Emitting Diode up to 673 nm

Electronics Letters 2026 Open access

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Authors: Wei Ou, Xin Hou, Yang Mei, Baoping Zhang, Daisuke Iida Iida, Kazuhiro Ohkawa
DOI: 10.1049/ell2.70522
Cited by: 1
References: 19

Abstract

ABSTRACT We successfully fabricated GaN‐based red resonant‐cavity light‐emitting diodes by using two dielectric distributed Bragg reflectors as the top and bottom reflector mirrors. The device exhibited resonant modes up to 673 nm, being the longest emission wavelength ever reported for a GaN‐based microcavity device. This achievement establishes spectral overlap between GaN‐based light‐emitting devices and GaAs‐based devices. This work contributes significantly to the development of GaN‐based microcavity devices in longer wavelengths.

Fields of Study & Subjects

GaN-based semiconductor devices and materials Strong Light-Matter Interactions Nanowire Synthesis and Applications

Publication details

Journal / source
Electronics Letters
Publisher
Institution of Engineering and Technology (IET)
Volume
62
Issue
1
Publication date
1 January 2026
Language
EN