Experimental investigation of temperature distribution in IGBT modules

The distribution of junction temperatures in multi-chip parallel IGBT modules is a key factor influencing their reliability. Infrared imaging experiments show that as current increases, both intra-chip and inter-chip temperature gradients become more pronounced. The center of each chip is significantly hotter than its edges, and chips located centrally within parallel modules exhibit higher temperatures. Compared to single-chip operation, these results underscore the role of thermal interactions and current distribution in the overall temperature rise. This study provides important experimental insights in to the thermal design and monitoring of high-power-density modules, offering a foundation for improving module reliability in real-world applications.