A Comprehensive Study of Quantum Transport Effects on Graphene Nanoribbon Field‐Effect Transistors (GNRFET)

ABSTRACT The graphene nanoribbon field‐effect transistor (GNRFET) is gaining attention as a promising device due to its potential in low‐power applications. Recent advancements in GNRFET circuit modeling have highlighted its appropriateness for these applications, primarily because of its distinct material characteristics and ability to scale. The objective of this research is to explore the static and switching behaviors of GNRFETs under numerous conditions and to create a model of their analytical device. The methodology involves developing and simulating the GNRFET model using a numerical quantum transport approach based on the non‐equilibrium Green's function (NEGF) formalism. This approach provides a self‐consistent solution to the three‐dimensional (3D) Poisson equation and the one‐dimensional (1D) Schrödinger equation. This research presents an in‐depth investigation of the static measurements and switching properties of GNRFETs. The study specifically investigates how the width of the graphene nanoribbon and the scaling of the channel length affect device characteristics. The analysis also considers the impact of different temperature and dielectric materials on the performance of the GNRFETs. From our study, we saw that shortening the channel length from 300–100 nm makes the on‐state current density rise from 0.428 × 10 3 mA/cm to 3.17 × 10 3 mA/cm and the off‐state current density rise from 0.045 mA/cm to 19.69 mA/cm. The simulation findings indicate that a reduction in channel length of the GNRFET leads to increased ON‐state and OFF‐state currents. When the device operates at room temperature using HfSiO4 as a dielectric material, this leads to a significant improvement in the I on /I off ratio, resulting in 6 times increase. In addition, our work demonstrates that widening the graphene nanoribbon has a negative effect on the off‐state performance of GNRFETs. These observations indicate that it is essential to optimize the width and length of GNRs to achieve high‐performance GNRFETs in applications that need low power consumption and rapid speed. The impact of channel size reduction and contact doping concentration on transistor performance must be evaluated for the most effective design, fabrication, and selection of GNRFETs in diverse circuits and applications.