Exploring the thermal stability of Sb 2 Se 3 on Bi addition
Abstract
The thermal characteristics of ( Sb 2 Se 3 ) 100 − x Bi x (x = 0, 0.4, 0.8, and 1.2) samples have been investigated via employing the differential scanning calorimetry (DSC) technique. The parameters transition temperature (T g ) of glass, melting temperature (T m ), and peak crystallization temperature (T p ) have been observed at a heating rate of 10 K/min. The rise in T g with increasing Bi content signifies the enhanced rigidity of the structure. Dietzel's criterion (Δ T ) and Hruby's parameter (K gl ) have been used to evaluate the thermal stability and glass-forming ability. The K gl value, ranging between 0.395 – 0.791 in the study, indicates a good glass-forming tendency; the reduced glass transition temperature (T rg ), ranging between 0.693 – 0.744, suggests strong thermal stability. Among all the compositions, the x = 1.2 sample showed the maximum ΔΤ and an enhancement in T g , T p , and T m . The study reveals that incorporating Bi into Sb 2 Se 3 improves the thermal characteristics, demonstrating its potential for various advanced functional materials.
Fields of Study & Subjects
Phase-change materials and chalcogenides
Chalcogenide Semiconductor Thin Films
Material Dynamics and Properties
Publication details
- Journal / source
- EPJ Web of Conferences
- Volume
- 356
- Pages
- 01008–01008
- Publication date
- 1 January 2026
- Language
- EN