Particle penetration with delta potentials in Kane-type semiconductors
Abstract
We have investigated the tunneling of electrons through a spherical, narrow, penetrable delta-type potential barrier in A3 B5-type semiconductors. Utilizing the Kane equations, along with the continuity conditions of the wave functions and the flux discontinuity at the interface of the spherical dots, we have analytically calculated the tunneling amplitude for semiconductor quantum dots. It has been demonstrated that the dependence of the transmission coefficient on the electron energy has a strongly resonant nature.
Fields of Study & Subjects
Semiconductor Quantum Structures and Devices
Quantum and electron transport phenomena
Advancements in Semiconductor Devices and Circuit Design
Publication details
- Journal / source
- Low Temperature Physics
- Volume
- 52
- Issue
- 3
- Pages
- 309–313
- Publication date
- 1 March 2026
- Language
- EN